Initial Growth Stages of Ge on Si(111).
نویسندگان
چکیده
منابع مشابه
Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1993
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.14.105